Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)-Reference-Cited by-同舟云学术

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Published:2020-04-13 Issue:7 Volume:49 Page:4091-4099
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Subramanian Baskaran,Anandan Mohanbabu,Veerappan Saminathan,Panneerselvam Murugapandiyan,Wasim Mohammed,Radhakrishnan Saravana Kumar,Pechimuthu Praveen,Verma Yogesh Kumar,Vivekanandhan Subash Navaneethan,Raju Elamurugan

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-020-08113-x.pdf

Reference40 articles.

1. A. Mohanbabu, N. Mohankumar, N. Anbuselvan, D. Godwin Raj, and C.K. Sarkar, Solid State Electron. (2014). https://doi.org/10.1016/j.sse.2013.09.009.

2. A. Mohanbabu, N. Mohankumar, D. Godwin Raj, P. Sarkar, and S.K. Saha, Superlattices Microstruct. (2017). https://doi.org/10.1016/j.spmi.2017.01.043.

3. A. Mohanbabu, N. Mohankumar, D. Godwin Raj, and P. Sarkar, Physica E (2017). https://doi.org/10.1016/j.physe.2017.05.005.

4. A. Mohanbabu, N. Mohankumar, D. Godwin Raj, P. Sarkar, and S.K. Saha, Int. J. Numer. Model. Electron. Netw. Devices Fields (2017). https://doi.org/10.1002/jnm.2276.

5. A. Mohanbabu, N. Mohankumar, and R. Saravanakumar, Superlattices Microstruct. (2017). https://doi.org/10.1016/j.spmi.2017.10.020.

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