Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit-Reference-Cited by-同舟云学术

Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit

Published:2017-08-03 Issue:3 Volume:31 Page:e2276
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Mohanbabu A.¹,Mohankumar N.¹,Godwin Raj D.²,Sarkar Partha³,Saha Samar K.⁴

Affiliation:

1. S.K.P Engineering College; Tiruvannamalai India

2. Dayananda Sagar University; Bangalore India

3. Biju Patnaik University of Technology; Odisha India

4. Prospicient Devices; Milpitas CA 95035 USA

Funder

Council of Scientific and Industrial Research (CSIR), Govt. of India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference40 articles.

4. Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation;Maroldt;Jpn J Appl Phys,2008

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