Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films
Author:
Funder
Japan Society for the Promotion of Science
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. A first-principles-derived method for computing the piezoelectric coefficients of complex semiconductor Sc1−xGaxN alloys
2. Ab initio calculations of structural properties of ScxGa1−xN
3. Properties ofGaN∕ScNandInN∕ScNsuperlattices from first principles
4. Electronic properties of zinc-blende Scx Ga1−xN
5. Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
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3. High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy;Applied Physics Letters;2020-04-13
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