Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

Published:2009-03 Issue:7 Volume:311 Page:2054-2057
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hall J.L.,Moram M.A.,Sanchez A.,Novikov S.V.,Kent A.J.,Foxon C.T.,Humphreys C.J.,Campion R.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Group III nitride semiconductors for short wavelength light-emitting devices

2. C.J. Humphreys, MRS BULLETIN 33, 2008.

3. Dislocation reduction in gallium nitride films using scandium nitride interlayers

4. Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition

5. Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering;Applied Physics Express;2023-12-29

2. High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy;Applied Physics Letters;2020-04-13

3. Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN 2 Using the Metathesis Reaction under High Pressure;European Journal of Inorganic Chemistry;2019-12-03

4. Giant polarization charge density at lattice-matched GaN/ScN interfaces;Applied Physics Letters;2019-12-02

5. Development of semiconducting ScN;Physical Review Materials;2019-02-14

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