Ab initio calculations of structural properties of ScxGa1−xN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2884580
Reference39 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. III–nitrides: Growth, characterization, and properties
3. Band parameters for nitrogen-containing semiconductors
4. First principles total energy calculations of the structural and electronic properties of ScxGa1–xN
5. Band-gap engineering in sputter-deposited ScxGa1−xN
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