Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC
2. Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III-V-N Alloy Layers
3. Dislocation-Free InxGa1-xP1-yNy/GaP1-zNzDouble-Heterostructure Light Emitting Diode on Si Substrate
4. Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
5. Growth and characterization of GaPN by OMVPE
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1. A Review of Synthesis and Novel Transport Properties of Multivalent Manganate Perovskite: Progress, Opportunities, and Challenges;Advanced Electronic Materials;2024-04-05
2. Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT;Vacuum;2023-10
3. Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells;Journal of Crystal Growth;2017-09
4. Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells;Applied Physics Express;2017-06-20
5. Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy;physica status solidi (c);2010-06-22
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