Growth and characterization of GaPN by OMVPE-Reference-Cited by-同舟云学术

Growth and characterization of GaPN by OMVPE

Published:2007-03 Issue:1 Volume:300 Page:182-185
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wakahara Akihiro,Furukawa Yuzo,Itoh Shinya,Hatakenaka Susumu,Yonezu Hiroo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. K. Samonji, H. Yonezu, K. Ojima, Y. Fujimoto, N. Ohshima, in: Proceedings of the second International Symposium on Blue Laser and Light Emitting Diodes, 1998, Abstract, p. 314.

2. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

3. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

4. Dislocation-Free InxGa1-xP1-yNy/GaP1-zNzDouble-Heterostructure Light Emitting Diode on Si Substrate

5. Growth and structural characterization of III N V semiconductor alloys

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