Effect of an applied static magnetic field on silicon dissolution into a germanium melt
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Prospects of SiGe heterodevices
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1. Modeling of the effect of the presence of a free surface on transport structures and mixing during the dissolution process of silicon into germanium melt;Journal of Thermal Analysis and Calorimetry;2020-07-06
2. Study of SiGe Crystal Growth Interface Processed in Microgravity;Crystal Growth & Design;2018-05-15
3. Lattice Boltzmann Modeling of the Dissolution Process of Silicon into Germanium using a Simplified Crystal Growth Technique;Energy Procedia;2017-12
4. Measurement of the diffusivity of CdTe in liquid Te at crystal growth temperatures;Journal of Crystal Growth;2015-02
5. Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities;Journal of Alloys and Compounds;2014-03
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