Critical thickness of MBE-grown Ga1−xInxSb (x<0.2) on GaSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
2. Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93μm
3. 2-μm GaInSb-AlGaAsSb distributed-feedback lasers
4. Strain effects in InGaSb/AlGaSb quantum wells grown by molecular beam epitaxy
5. Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc‐blende structure
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1. Strain compensated type II superlattices grown by molecular beam epitaxy;Chinese Physics B;2023-03-01
2. Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range;Optical Materials Express;2022-06-01
3. Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation;Two-dimensional Materials for Photodetector;2018-04-04
4. Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors;Journal of Crystal Growth;2017-11
5. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers;Nanoscale Research Letters;2015-12
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