Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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2. The 6.1A family (InAs, GaSb, AlSb) and its heterostructures: a selective review;Kroemer;Physica E,2004
3. Proposal for strained type-II superlattice infrared detectors;Smith;J. Appl. Phys.,1987
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures;SPIE Micro + Nano Materials, Devices, and Applications 2019;2019-12-31
2. Dirac Semimetal States in Engineered Zero‐Gap InAs/GaInSb Superlattices;physica status solidi (b);2019-04-23
3. Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog;Science Advances;2018-04-06
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