Temperature dependence of thin films growth on Si(001) substrates by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
2. High-κ gate dielectrics: Current status and materials properties considerations
3. The importance of network structure in high-k dielectrics: LaAlO3, Pr2O3, and Ta2O5
4. Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
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