MBE grown GaInNAs-based multi-Watt disk lasers-Reference-Cited by-同舟云学术

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MBE grown GaInNAs-based multi-Watt disk lasers

Published:2009-03 Issue:7 Volume:311 Page:1868-1871
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Korpijärvi V.-M.,Guina M.,Puustinen J.,Tuomisto P.,Rautiainen J.,Härkönen A.,Tukiainen A.,Okhotnikov O.,Pessa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling

2. 7W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser

3. Highly strained InGaAs∕GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170nm

4. GaInNAs: a novel material for long-wavelength semiconductor lasers

5. Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser

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1. VECSELs in the Wavelength Range 1.18–1.55 μm;Vertical External Cavity Surface Emitting Lasers;2021-09-17

2. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters;Applied Physics Reviews;2020-12

3. Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure;Opto-Electronics Review;2018-09

4. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications;Journal of Physics D: Applied Physics;2016-10-25

5. A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm;Vertical External Cavity Surface Emitting Lasers (VECSELs) VI;2016-03-10

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