Highly strained InGaAs∕GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170nm-Reference-Cited by-同舟云学术

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Highly strained InGaAs∕GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170nm

Published:2007-09-24 Issue:13 Volume:91 Page:131114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fan Li,Hessenius Chris,Fallahi Mahmoud,Hader Jörg,Li Hongbo,Moloney Jerome V.,Stolz Wolfgang,Koch Stephan W.,Murray James T.,Bedford Robert

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2790838

Reference18 articles.

1. Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

2. Closed-loop design of a semiconductor laser

3. Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

4. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

5. Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser

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1. High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD;Journal of Luminescence;2023-11

2. Nanosecond Pulse Generation in Optically Pumped Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser;IEEE Photonics Journal;2022-06

3. Tunable, CW Laser Emission at 225 nm via Intracavity Frequency Tripling in a Semiconductor Disk Laser;IEEE Journal of Selected Topics in Quantum Electronics;2017-11

4. Optically pumped VECSELs: review of technology and progress;Journal of Physics D: Applied Physics;2017-08-23

5. Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm;Applied Physics Letters;2016-02-15

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