The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates-Reference-Cited by-同舟云学术

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The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

Published:2008-11 Issue:23 Volume:310 Page:4876-4879
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Caban Piotr,Kosciewicz Kinga,Strupinski Wlodek,Wojcik Marek,Gaca Jaroslaw,Szmidt Jan,Ozturk Mustafa,Ozbay Ekmel

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

2. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

3. LPMOCVD growth of GaN on silicon carbide

4. Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

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1. Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy;2D Materials;2023-02-01

2. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices;Materials;2012-07-24

3. FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS;Modern Physics Letters B;2011-01-20

4. Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC;Applied Physics A;2010-04-07

5. Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies;Acta Physica Polonica A;2010-02

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