Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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4. Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy
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1. Proposal and achievement of a relatively Al-rich interlayer for In-rich Al x In1−x N films deposition;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2013-10
2. Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN;Journal of Crystal Growth;2013-03
3. Synthesis of GaN microspheres and their properties;Sensors and Actuators B: Chemical;2013-01
4. Structural and electrical properties of AlxIn1-xN (0.10≤x≤0.94) films grown on sapphire substrates;Journal of Materials Research;2010-09
5. Imaging dislocations in gallium nitride across broad areas using atomic force microscopy;Review of Scientific Instruments;2010-06
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