Proposal and achievement of a relatively Al-rich interlayer for In-rich Al x In1−x N films deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-013-0784-4.pdf
Reference44 articles.
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3. Gonschorek M, Carlin J F, Feltin E, et al. High Electron Mobility Lattice-matched AlInN/GaN Field-effect Transistor Heterostructures[J]. Appl. Phys. Lett., 2006, 89(6):062 106
4. Ferhat M, Bechstedt F. First-principles Calculations of Gap Bowing in InxGa1−x N and InxAl1−x N Alloys: Relation to Structural and Thermodynamic Properties[J]. Phys. Rev. B, 2002, 65(7): 075 213
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