Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Three-Dimensional Si/Ge Quantum Dot Crystals
2. Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template
3. Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates
4. Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands
5. The structure of silicon surfaces from (001) to (111)
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1. Structural and optical characteristics of the hexagonal ZnO films grown on cubic MgO (001) substrates;Optics Letters;2016-10-20
2. Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting;Physical Review B;2012-02-24
3. STM study of successive Ge growth on “V”-stripe patterned Si (001) surfaces at different growth temperatures;Applied Surface Science;2011-10
4. A Combined In Situ Grazing Incidence Small Angle X-Ray Scattering and Grazing Incidence X-Ray Diffraction Study of the Growth of Ge Islands on Pit-Patterned Si(001) Substrates;Journal of Nanoscience and Nanotechnology;2011-10-01
5. Strain engineering of silicon–germanium (SiGe) micro- and nanostructures;Silicon–Germanium (SiGe) Nanostructures;2011
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