Three-Dimensional Si/Ge Quantum Dot Crystals-Reference-Cited by-同舟云学术

Three-Dimensional Si/Ge Quantum Dot Crystals

Published:2007-09-25 Issue:10 Volume:7 Page:3150-3156
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Grützmacher Detlev¹,Fromherz Thomas¹,Dais Christian¹,Stangl Julian¹,Müller Elisabeth¹,Ekinci Yasin¹,Solak Harun H.¹,Sigg Hans¹,Lechner Rainer T.¹,Wintersberger Eugen¹,Birner Stefan¹,Holý Václav¹,Bauer Günther¹

Affiliation:

1. Institute of Bio- and Nanosystems 1, Semiconductor Nanoelectronics, Forschungszentrum Jülich, D-52425 Jülich, Germany, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland, Institut für Halbleiter und Festkörperphysik, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria, Walter Schottky Institut, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany, and nextnano3, Frauenmantelanger 21, D-80937 Munich, Germany, and...

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0717199

Reference38 articles.

1. Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

3. Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution

4. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

5. Hierarchical Self-Assembly of Epitaxial Semiconductor Nanostructures

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