Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Breakdown in silicon oxides (II)—correlation with Fe precipitates
2. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
3. Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
4. Gettering mechanisms in silicon
5. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior
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2. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15
3. Effect of Isovalent Doping on Hydrogen Passivated Vacancy-oxygen Defect Complexes in Silicon: Insights from Density Functional Theory;Silicon;2020-07-15
4. Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace;Journal of the Korean Crystal Growth and Crystal Technology;2016-06-30
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