Funder
National Research Foundation
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Wang H, Chroneos A, Hall D, Sgourou E, Schwingenschlögl U (2013) Phosphorous-vacancy-oxygen defects in silicon. J Mater Chem A 1(37):11384–11388
2. Christopoulos S-R, Wang H, Chroneos A, Londos CA, Sgourou EN, Schwingenschlögl U (2015) VV and VO2 defects in silicon studied with hybrid density functional theory. J Mater Sci: Mater Electron 26(3):1568–1571
3. Londos C, Sgourou E, Hall D, Chroneos A (2014) Vacancy-oxygen defects in silicon: the impact of isovalent doping. J Mater Sci: Mater Electron 25(6):2395–2410
4. Watkins GD (2000) Intrinsic defects in silicon. Materials Science in Semiconductor Processing 3 (4):227–235
5. Hallén A, Keskitalo N, Masszi F, Nagl V (1996) Lifetime in proton irradiated silicon. J Appl Phys 79(8):3906–3914
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