GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application-Reference-Cited by-同舟云学术

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Published:2008-11 Issue:23 Volume:310 Page:5232-5236
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

di Forte Poisson M.-A.,Magis M.,Tordjman M.,Di Persio J.,Langer R.,Toth L.,Pecz B.,Guziewicz M.,Thorpe J.,Aubry R.,Morvan E.,Sarazin N.,Gaquière C.,Meneghesso G.,Hoel V.,Jacquet J.-C.,Delage S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

2. H. McD. Hobgood, in: Proceedings of ICSCRM2003, Lyon, 2003, p. 46.

3. III-Nitrides semiconductor compounds for microwave devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air;Materials Science in Semiconductor Processing;2020-08

2. Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate;Thin Solid Films;2014-01

3. Electron transport in passivated AlGaN/GaN/Si HEMTs;Materials Science in Semiconductor Processing;2013-12

4. Femtosecond pump-probe characterization of high-pressure grown Al x Ga 1-x N single crystals;SPIE Proceedings;2009-02-12

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