Electron transport in passivated AlGaN/GaN/Si HEMTs-Reference-Cited by-同舟云学术

Electron transport in passivated AlGaN/GaN/Si HEMTs

Published:2013-12 Issue:6 Volume:16 Page:1775-1778
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Gassoumi Malek,Mosbahi Hana,Soltani Ali,Sbrugnera-Avramovic Vanessa,Ali Zaidi Mohamed,Gaquiere Christophe,Mejri Houcine,Maaref Hassen

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, M. Kuzuhara, A110-W AlGaN/GaN Heterojunction PET on Thinned Sapphire Substrate, IEDM Technical Digest, Washington, DC, 2001, pp. 381–384.

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

4. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

5. 30-W/mm GaN HEMTs by Field Plate Optimization

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2. DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application;Results in Physics;2019-03

3. High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation;Silicon;2018-06-02

4. Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications;Superlattices and Microstructures;2015-02

5. Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ SixNyon AlGaN;Japanese Journal of Applied Physics;2014-01-01