MOVPE growth of Ga(As)SbN on GaSb substrates-Reference-Cited by-同舟云学术

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MOVPE growth of Ga(As)SbN on GaSb substrates

Published:2008-11 Issue:23 Volume:310 Page:4839-4842
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang J.Y.T.,Mawst L.J.,Jha S.,Kuech T.F.,Wang D.,Shterengas L.,Belenky G.,Meyer J.R.,Vurgaftman I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Giant and composition-dependent optical band gap bowing in dilute GaSb1−xNx alloys

2. Band gap reduction in GaNSb alloys due to the anion mismatch

3. Growth of dilute GaNSb by plasma-assisted MBE

4. Growth of dilute GaSbN layers by liquid-phase epitaxy

5. Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020

2. Introduction to Metalorganic Vapor Phase Epitaxy;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

3. Growth far from equilibrium: Examples from III-V semiconductors;Applied Physics Reviews;2016-12

4. X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth;Journal of Electronic Materials;2012-04-11

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