Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
2. Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE
3. Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
4. Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
5. The growth of crystals and the equilibrium structure of their surfaces
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1. Growth of Bulk GaN from Gas Phase;Crystal Research and Technology;2018-03-12
2. GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source;Journal of Crystal Growth;2016-01
3. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016
4. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09
5. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h;Journal of Crystal Growth;2014-01
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