Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
4. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides
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1. Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy;Semiconductor Science and Technology;2023-05-05
2. Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates;Semiconductor Science and Technology;2022-11-11
3. Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2019-05-22
4. InGaN/GaN quantum well improved byin situSiNxpretreatment of GaN template;physica status solidi (a);2016-07-25
5. Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth;Journal of Applied Physics;2016-04-14
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