High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
2. Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities
3. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate
4. Crystal growth of aluminum nitride under high pressure of nitrogen
5. Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
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1. Study on a eco-friendly and efficient method for growing aluminum nitride whiskers;Vacuum;2023-04
2. Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy;ACS Omega;2022-11-03
3. Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection;Crystal Growth & Design;2021-04-30
4. High-aspect-ratio single-crystalline AlN nanowires: Free-catalytic PVT growth and field-emission studies;Journal of Alloys and Compounds;2019-07
5. Fabrication of high-crystallinity a -plane AlN films grown on r -plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions;Journal of Crystal Growth;2017-06
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