Fabrication and properties of GaN-based lasers-Reference-Cited by-同舟云学术

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Fabrication and properties of GaN-based lasers

Published:2008-08 Issue:17 Volume:310 Page:3979-3982
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Perlin P.,Świetlik T.,Marona L.,Czernecki R.,Suski T.,Leszczyński M.,Grzegory I.,Krukowski S.,Nowak G.,Kamler G.,Czerwinski A.,Plusa M.,Bednarek M.,Rybiński J.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN

3. Growth and characterization of freestanding GaN substrates

4. Growth of Bulk GaN Crystals by the Basic Ammonothermal Method

5. GaN bulk substrates grown under pressure from solution;Grzegory,2005

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers;Journal of Physics: Conference Series;2021-11-01

2. Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies;Journal of Crystal Growth;2019-02

3. Thermal analysis of GaN-based laser diode mini-array;Chinese Physics B;2018-09

4. The research on temperature distribution of GaN-based blue laser diode;Solid-State Electronics;2015-07

5. Gain saturation in InGaN superluminescent diodes;SPIE Proceedings;2014-03-08

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