Physical properties of high pressure reactively sputtered hafnium oxide-Reference-Cited by-同舟云学术

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Physical properties of high pressure reactively sputtered hafnium oxide

Published:2008-08 Issue:12 Volume:82 Page:1391-1394
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Toledano-Luque M.,Martínez F.L.,San Andrés E.,del Prado A.,Mártil I.,González-Díaz G.,Bohne W.,Röhrich J.,Strub E.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

4. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

5. Molecular models and activation energies for bonding rearrangement in plasma-depositeda−SiNx:Hdielectric thin films treated by rapid thermal annealing

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