rf-Magnetron sputter deposited ZrO2 dielectrics for metal–insulator–semiconductor capacitors
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference23 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures
3. Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
4. Dielectric property and conduction mechanism of ultrathin zirconium oxide films
5. First-principles exploration of alternative gate dielectrics: Electronic structure ofZrO2/SiandZrSiO4/Siinterfaces
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1. Influence of Fabrication Modes on Magnetron-Sputtered ZrO2-Based Memristors’ Properties;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28
2. Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation;IEEE Transactions on Electron Devices;2024-03
3. Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates;Materials Research Express;2024-01-01
4. High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate;Diamond and Related Materials;2023-04
5. Microstructure and Properties of ZrO2 Alloyed Layer on Ti- 6Al-4V;International Journal of Electrochemical Science;2021-05
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