Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon-Reference-Cited by-同舟云学术

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Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon

Published:2021-01 Issue: Volume:183 Page:109835
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Sun Nana,Zhou Dayu,Liu Wenwen,Zhang Yu,Li Shuaidong,Wang Jingjing,Ali Faizan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference40 articles.

1. Development of hafnium based high-k materials-A review;Choi;Mater. Sci. Eng. R.,2011

2. Large-area rolled-up nanomembrane capacitor arrays for electrostatic energy storage;Sharma;Adv. Energy Mater.,2014

3. Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering;Zhang;Ceram. Int.,2018

4. Dielectric characteristics of double layer structure of extremely thin Ta2O5/SiO2 on Si;Nishioka;J. Electrochem. Soc.,1987

5. Interface and oxide properties of rf sputtered Ta2O5-Si structures;Dimitrova;Vaccines (Cold Spring Harbor),1998

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