Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching-Reference-Cited by-同舟云学术

Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching

Published:2019-07 Issue: Volume:165 Page:262-265
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Tarakanov V.P.,Shustin E.G.^ORCID,Ronald K.

Funder

Russian Foundation for Basic Research

NRNU MEPhI

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. Charging of pattern features during plasma etching;Arnold;J. Appl. Phys.,1991

2. Simulation of ion trajectories near submicron-patterned surface including effects of local charging and ion drift velocity toward wafer;Ootera;Jpn. J. Appl. Phys.,1996

3. Notch formation by stress enhanced spontaneous etching of polysilicon;Kinoshita;J. Vac. Sci. Technol.,1996

4. On the origin of charging damage during etching of antenna structures;Hwang;J. Vac. Sci. Technol.,1997

5. Hardmask charging during Cl2 plasma etching of silicon

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