Characterization and properties of GaN films deposited by middle-frequency magnetron sputtering with anode-layer ion source assistance
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference27 articles.
1. Near-field cathodoluminescence studies onn-doped gallium nitride films
2. Field emission from amorphous GaN deposited on Si by dc sputtering
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Recent aspects concerning DC reactive magnetron sputtering of thin films: a review
5. The disappearing anode myth: strategies and solutions for reactive PVD from single magnetrons
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3. Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma;Microelectronics International;2021-06-16
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5. Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source;Japanese Journal of Applied Physics;2019-01-21
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