A modified scheme to tune the Schottky Barrier Height of NiSi by means of dopant segregation technique
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference25 articles.
1. Overview and status of metal S/D Schottky-barrier MOSFET technology
2. On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
3. Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium
4. Low Schottky barriers on n-type silicon (001)
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1. Dissolution‐Induced Surface Reconstruction of Ni0.95Pt0.05Si/p‐Si Photocathode for Efficient Photoelectrochemical H2 Production;Small;2024-03-13
2. NiSi/p⁺-Si(n⁺-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?;IEEE Transactions on Electron Devices;2021-06
3. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing;Materials;2018-03-22
4. Advanced contact technology;CMOS Past, Present and Future;2018
5. A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique;ECS Journal of Solid State Science and Technology;2017
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