Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma-Reference-Cited by-同舟云学术

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Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma

Published:2008-06 Issue:11 Volume:82 Page:1198-1202
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yun Sun Jin,Efremov Alexander,Kim Mansu,Kim Dae-Won,Lim Jung Wook,Kim Yong-Hae,Chung Choong-Heui,Park Dong Jin,Kwon Kwang-Ho

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference24 articles.

1. Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition

2. Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition

3. High-Performance Ultralow-Temperature Polycrystalline Silicon TFT Using Sequential Lateral Solidification

4. Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4Inductively Coupled Plasma

5. Fabrication of magnetic recording heads and dry etching of head materials

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1. High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications;ACS Applied Nano Materials;2023-06-03

2. Tailored Light Scattering through Hyperuniform Disorder in Self‐Organized Arrays of High‐Index Nanodisks;Advanced Optical Materials;2021-06

3. Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET;ETRI Journal;2016-04-18

4. Fabrication of high aspect ratio silicon micro-structures based on aluminum mask patterned by IBE and RIE processing;Microsystem Technologies;2015-09-02

5. Dry etching characteristics of Mo and Al2O3 films in O2/Cl2/Ar inductively coupled plasmas;Thin Solid Films;2014-02

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