Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET-Reference-Cited by-同舟云学术

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Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Published:2016-04-18 Issue: Volume: Page:
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Ahn Ho-Kyun,Kim Hae-Cheon,Kang Dong-MIn,Kim Sung-Il,Lee Jong-Min,Lee Sang-Heung,Min Byoung-Gue,Yoon Hyoung-Sup,Kim Daong-Young,Lim Jong-Won,Kwon Yong-Hwan,Nam Eun-Soo,Lee Jung-Hee

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A red-emitting micrometer scale LED with external quantum efficiency >8%;Applied Physics Letters;2023-04-10

2. A High Performance Normally-Off AlGaN/GaN Split-Gate Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) Using Piezo Neutralization Technique;Journal of Nanoelectronics and Optoelectronics;2022-02-01

3. Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages;Electronics;2020-11-21

4. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications;Journal of the Korean Physical Society;2017-09

5. Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT;ECS Journal of Solid State Science and Technology;2017

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