Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT

Published:2017 Issue:4 Volume:6 Page:P184-P186
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Jung Hyun-Wook,Shin Min Jeong,Chang Sung-Jae,Ahn Ho-Kyun,Do Jae-Won,Cho Kyu Jun,Won Chul-Ho,Min Byoung-Gue,Kim Haecheon,Yoon Hyung Sup,Lee Jung-Hee,Lim Jong-Won

Funder

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference15 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Effect of Sputtered-Al2O3Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs

3. High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

4. Directed self-assembly of nematic liquid crystalline polymers on a rubbed polyimide alignment layer

5. GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3Bi-Layer Passivation;ECS Journal of Solid State Science and Technology;2018

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP