Dependence of Zr content on electrical properties of Bi3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference20 articles.
1. Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films
2. Lanthanum-substituted bismuth titanate for use in non-volatile memories
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4. Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(111)/Ti/SiO2/Si and p-type Si(100) substrates
5. Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique
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