Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(111)/Ti/SiO2/Si and p-type Si(100) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
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2. Electrical properties of Bi3.15Nd0.85Ti2.8-xZr0.2MnxO12 thin films with different Mn content synthesized by chemical solution deposition (CSD);Journal of Non-Crystalline Solids;2011-05
3. Investigation on Divalent Metal Substituted Bismuth Titanate Ferroelectric Thin Films;Integrated Ferroelectrics;2011-01
4. Dependence of Zr content on electrical properties of Bi3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD);Vacuum;2010-08
5. The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors;Electrochemical and Solid-State Letters;2010
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