Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491594
Reference22 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
2. Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition
3. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
4. Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method
5. Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal–ferroelectric–insulator–semiconductor structure
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