Trap-assisted tunnelling in ion-implanted n-Si/SiO2 structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference11 articles.
1. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
2. Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers
3. A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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