A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Author:

Cho Byung Jin,Kim Sun Jung,Ling C.H,Joo Moon-Sig,Yeo In-Seok

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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2. Ma TP, Dressendorfer PV. Ionizing Radiation Effects In MOS Devices and Circuits. New York: Wiley, 1989

3. Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides;Joshi;Electron Lett,1992

4. Reliability effects of X-ray lithography exposures on submicron-channel MOSFETs;Lelis;IEEE Trans Nuc Sci,1993

5. Reliability issues of flash memory cells;Aritome;Proc IEEE,1993

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