Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920471?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Ma, T.P., and Dressendorfer, P.V.: Ionizing radiation effects in MOS devices and circuits, (Wiley Interscience, New York 1989)
2. Sze, S.M.: Physics of semiconductor devices, 2nd edn(Wiley, New York 1981)
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