Passivation performance improvement of ultrathin ALD-Al2O3 film by chemical oxidation-Reference-Cited by-同舟云学术

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Passivation performance improvement of ultrathin ALD-Al2O3 film by chemical oxidation

Published:2018-03 Issue: Volume:149 Page:180-184
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Cha Hamchorom,Chang Hyo Sik

Funder

Korea Institute of Energy Technology Evaluation and PlanningKorea Institute of Energy Technology Evaluation and Planning (KETEP)

Korean Ministry of Trade, Industry and EnergyKorean Ministry of Trade, Industry and Energy (MOTIE)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Status and prospects of Al2O3-based surface passivation schemes for solar cells;Dingemans;J. Vac. Sci. Technol. A,2012

2. Role of annealing conditions on surface passivation properties on ALD Al2O3 films;Kersten;Energy Procedia,2013

3. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3;Schmidt;Prog. Photovolt: Res. Appl.,2008

4. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Sol. Energy Mater. Sol. Cell.,2006

5. Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs;Lin;Appl. Phys. Lett.,2005

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1. Improved passivation performance of Al2O3 interlayer/MoOX thin films continuously grown via atomic layer deposition;Thin Solid Films;2023-02

2. Study of antioxidation behavior of ultra-thin films for Ce metal surface protection with atomic layer deposition upon air exposure;Vacuum;2022-12

3. Effects of Ce(NO₃)₃ concentration on microstructure and properties of plasma electrolytic oxidation layer on 6061 alloy;Materials Research Express;2022-09-01

4. Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450 °C;Vacuum;2022-08

5. Green electroluminescence of Al2O3 film;Vacuum;2022-07

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