Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure-Reference-Cited by-同舟云学术

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Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure

Published:2015-09 Issue: Volume:119 Page:276-283
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Dasaradha Rao L.,Shanthi Latha K.,Rajagopal Reddy V.,Choi Chel-Jong

Funder

the Ministry of Trade, Industry and Energy (MOTIE)

Ministry of Science, ICT and Future Republic of Korea

Ministry of Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference38 articles.

1. Inversion-Type InP MOSFETs with EOT of 21 Å Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric

2. Carrier transport properties of Al∕CdS∕GaSb structures

3. Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots

4. Physics and chemistry of III-V compound semiconductor interfaces;Williams,1985

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1. Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer;Physica B: Condensed Matter;2024-06

2. Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure;Journal of Molecular Structure;2023-12

3. In-depth opto-electrical analysis of Ni:CdS film towards the performance as Ag/Ni:CdS/FTO Schottky diode;Optical Materials;2023-09

4. Tuning work function and surface-modified AZO films on FTO substrate to improve the efficiency of thin-film silicon solar cells;Journal of Materials Science: Materials in Electronics;2023-04

5. The effect of thermal annealing on Ti/p-Si Schottky diodes;Journal of Materials Science: Materials in Electronics;2021-05-14

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