Inversion-Type InP MOSFETs with EOT of 21 Å Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric

Author:

Zhao Han,Shahrjerdi Davood,Zhu Feng,Kim Hyoung-Sub,OK Injo,Zhang Manhong,Yum Jung Hwan,Banerjee Sanjay K.,Lee Jack C.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. I. OK, H. Kim, M. Zhang, T. Lee, F. Zhu, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, et al. , in IEEE Electron Devices Meeting, IEDM, p. 1 (2006).

2. Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

3. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

4. M. Hong, F. Ren, W. Hobson, J. Kuo, J. Kwo, J. Mannaerts, J. Lothaian, M. Marcus, C. Liu, A. Sergent, et al. , in IEEE International Symposium on Compound Semiconductors, p. 319 (1998).

5. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

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