InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high-k dielectric-Reference-Cited by-同舟云学术

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InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high-k dielectric

Published:2016-06-21 Issue:7 Volume:122 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Yen Chih-Feng,Yeh Min-Yen,Chong Kwok-Keung,Hsu Chun-Fa,Lee Ming-Kwei

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-016-0165-x.pdf

Reference39 articles.

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2. N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D.G. Schlom, M.B. Santos, J.S. Harris, Y. Nishi, Appl. Phys. Lett. 91, 093509 (2007)

3. M. Yokoyama, T. Yasuda, H. Takagi, N. Miyata, Y. Urabe, H. Ishii, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi, Appl. Phys. Lett. 96, 142106 (2010)

4. R.V. Galatage, H. Dong, D.M. Zhernokletov, B. Brennan, C.L. Hinkle, R.M. Wallace, E.M. Vogel, Appl. Phys. Lett. 102, 132903 (2013)

5. N. Taoka, M. Yokoyama, S.H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi, Microelectron. Eng. 88, 1087 (2011)

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3. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements;Nano Letters;2018-04-27

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