Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4799660
Reference23 articles.
1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
2. Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack
3. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
4. Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate
5. Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
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1. Transparent In-Line Optical Power Monitoring Using InP/Si Hybrid Waveguide Phototransistor;Journal of Lightwave Technology;2024-06-15
2. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS Applied Electronic Materials;2023-02-09
3. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS APPL ELECTRON MA;2023
4. Properties and modification of native oxides of InP(100);Journal of Physics D: Applied Physics;2022-12-13
5. Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device;Applied Surface Science;2022-05
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