Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures-Reference-Cited by-同舟云学术

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Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures

Published:2000-05 Issue: Volume:51-52 Page:433-440
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Radhakrishnan K,Patrick T.H.K,Zhang P.H,Zheng H.Q,Yoon S.F,Raman A

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas

2. Interface states in modulation-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructures

3. dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors

4. Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE

5. Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-destructive characterization of thin layer resonant tunneling diodes;Journal of Applied Physics;2019-09-28

2. Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices;Brazilian Journal of Physics;2002-06

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