Electron and hole trapping in thermal oxides that have been ion implanted-Reference-Cited by-同舟云学术

Electron and hole trapping in thermal oxides that have been ion implanted

Published:2001-11 Issue:1-4 Volume:59 Page:285-289
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Mrstik B.J,Hughes H.L,McMarr P.J,Gouker P

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Characterization of electron traps in aluminum-implanted SiO2;Young;IBM J. Res. Develop.,1978

2. Ion implantation induced stoichiometric imbalance in SiO2;Offenberg;Appl. Surf. Sci.,1987

3. Hole capture in SiO2 after ion implantation;Neitzert;Appl. Surf. Sci.,1987

4. Hole and electron trapping in ion implanted thermal oxides and SIMOX;Mrstik;IEEE Trans. Nucl. Sci.,2000

5. Confinement phenomena in buried oxides of SIMOX structures as affected by processing;Afanas’ev;J. Electrochem. Soc.,1996

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers;IEEE Transactions on Nuclear Science;2021-07

2. Metastable Electron Traps in Modified Silicon-on-Insulator Wafer;Chinese Physics Letters;2018-05

3. Research on the radiation hardened SOI devices with single-step Si ion implantation;Chinese Physics B;2018-04

4. Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer;IEEE Transactions on Nuclear Science;2016-10

5. Hardening silicon-on-insulator nMOSFETs by multiple-step Si + implantation;Microelectronics Reliability;2016-02