Research on the radiation hardened SOI devices with single-step Si ion implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/4/048503/pdf
Reference20 articles.
1. Frontiers of silicon-on-insulator
2. Radiation effects in SOI technologies
3. Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides
4. Paramagnetic defect centers in BESOI and SIMOX buried oxides
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4. Experimental and computational study of visible light-induced photocatalytic ability of nitrogen ions-implanted TiO2 nanotubes*;Chinese Physics B;2020-04-01
5. The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer;Microelectronics Reliability;2019-12
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